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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * RDS(on)= 5 * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP3306F MC ZVN3306F S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 150 3 20 330 -55 to +150 SOT23 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS ID(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 3 typ 4 typ 4 typ 5 typ 150 35 25 8 5 7 6 8 750 5 60 0.8 2.4 20 0.5 50 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD 18V, I D =500mA V DS =18V, V GS =0V, f=1MHz I D =1mA, V GS =0V I D =1mA, V DS = V GS V GS = 20V, V DS =0V V DS =60V, V GS =0V V DS =48V, V GS =0V, T=125C(2) V DS =18V, V GS =10V V GS =10V, I D =500mA V DS =18V, I D =500mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 393 ZVN3306F TYPICAL CHARACTERISTICS VGS=10V 9V ID(On) -On-State Drain Current (Amps) 8V 0.8 7V 6V 5V 4V 3V 0 0 2 4 6 8 10 VDS-Drain Source Voltage (Volts) 1.0 10 8 0.6 6 ID= 1A 4 0.4 0.2 2 0.5A 0.25A 0 0 2 4 6 8 10 VDS - Drain Source Voltage (Volts) VGS -Gate Source Voltage (Volts) Saturation Characteristics Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance () ID(On) -On-State Drain Current (Amps) 1.0 VDS=10V 0.8 10 5 ID= 1A 0.5A 0.25A 0.6 0.4 0.2 0 0 2 4 6 8 10 1 1 10 20 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Transfer Characteristics On-resistance vs gate-source voltage 2.4 gfs-Forward Transconductance (mS) Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 -20 ain Dr ID=-0.5A 200 180 160 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VDS=18V R ce an ist es R ce ur So n) (o DS Gate Thresh old Voltage VG S(t h) 0 20 40 60 80 100 120 140 160 T-Temperature (C) ID(on) - Drain Current (Amps) Normalised RDS(on) and VGS(th) vs Temperature Transconductance v drain current 3 - 394 ZVN3306F TYPICAL CHARACTERISTICS 200 50 gfs-Transconductance (mS) 120 100 80 60 40 20 0 0 1 2 3 4 C-Capacitance (pF) 180 160 140 VDS=18V 40 30 20 10 0 Coss Crss 0 10 20 30 40 50 Ciss 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts) Transconductance v gate-source voltage Capacitance v drain-source voltage VDD=20V 30V 50V VGS-Gate Source Voltage (Volts) 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ID=800mA Q-Charge (nC) Gate charge v gate-source voltage 3 - 395 |
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